半导体材料




半导体材料是导电能力介于导体和绝缘体之间的一类固体材料。



发展



  • 1833年，英國的法拉第（Michael Faraday）發現的其中一種半導體材料：硫化銀，因為它的電阻隨著溫度上升而降低。

  • 1874年，德國的布勞恩（Ferdinand Braun），注意到硫化物的電導率與所加電壓的方向有關，這就是半導體的整流作用。

  • 1947年12月23日，巴丁与布拉坦（Walter Brattain）進一步使用點接觸電晶體製作出一個語音放大器，電晶體正式發明。

  • 1958年9月12日，德州的基尔比（Jack Kilby），細心地切了一塊鍺作為電阻，再用一塊pn接面做為電容，製造出一個震盪器的電路。

  • 1970年，超晶格概念的提出和超晶格量子阱的研制成功。



分类


以原料分为：




  • 元素半导体材料：以单一元素组成的半导体，属于这一材料的有硼、金刚石、锗、硅、灰锡、锑、硒、碲等，其中以锗、硅、锡研究较早，制备工艺相对成熟。


  • 复合半导体材料：由两种或两种以上无机物化合成的半导体，种类繁多，已知的二元化合物就有数百种。


    • 三五半导体：由Ⅲ族元素Al、Ga、In和V族元素P、As、Sb组成，比如砷化鎵（GaAs）；它们都具有闪锌矿结构，在应用方面仅次于Ge、Si。


    • 二六半导体：Ⅱ族元素Zn、Cd、Hg和Ⅵ族元素S、Se、Te形成的化合物，是一些重要的光电材料；ZnS、CdTe、HgTe具有闪锌矿结构。


    • 四六半导体：SiC和Ge-Si合金都具有闪锌矿的结构。










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